Sense amplifier approach for high speed SRAM Cell
نویسنده
چکیده
In this paper a high speed hybrid current mode sense amplifier is presented. Sense amplifier is the most important component of SRAM cell used to sense stored data. Sense amplifiers are used to read the contents of SRAM cells. Sense amplifiers perform amplification, delay reduction and power reduction. Earlier voltage mode sense amplifiers are used to sense the data from bitlines. But with increase in bitline capacitance delay increases in voltage mode sense amplifier. So hybrid current mode sense amplifier is a new approach of sensing data with minimum delay and power dissipation. This paper explores the design and analysis of hybrid current mode sense amplifier. The simulation is carried out at 1.8V / 0.18μm technology using tanner (13.0 Version) tool. The results are compared with voltage mode sense amplifier.
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